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BFP843 Datasheet, PDF (7/26 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
BFP843
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Product Brief
Product Brief
The BFP843 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband
pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These measures
simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume
silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up
to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications in which
low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance
the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is
housed in an easy to use plastic package with visible leads.
Data Sheet
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Revision 1.0, 2013-06-19