BFP843 Datasheet, PDF (12/26 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BFP843
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
Electrical Characteristics
Top View
E
C
VC
Bias -T
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 5-1 BFP843 Testing Circuit
Table 5-3 AC Characteristics, V_CE = 1.8 V, f = 450 MHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
24.5 –
24.5 –
0.9 –
22
–
7
–
24
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 8 mA
I_C = 8 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-4 AC Characteristics, V_CE = 1.8 V, f = 900 MHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
24
–
24
–
0.9 –
22
–
8
–
23.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 8 mA
I_C = 8 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Data Sheet
12
Revision 1.0, 2013-06-19