BFP750 Datasheet, PDF (7/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

SiGe:C Heterojunction Wideband RF Bipolar Transistor
SOT343
1
Features
• Highly linear low noise driver amplifier for all RF frontends
up to 5.5 GHz
• Output compression point OP_1dB = 16 dBm
at 60 mA, 3 V, 3.5 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP₃ = 28.5 dBm
at 60 mA, 3 V, 3.5 GHz, 50 Ω system
3
4
2
1
• Maximum gain G_ms = 19 dB at 60 mA, 3 V, 3.5 GHz
• Minimum noise figure NF_min = 1.15 dB at 30 mA, 3 V, 3.5 GHz
• Based on Infineon´s reliable, high volume SiGe:C wafer technology
• Easy to use Pb-free (RoHS compliant) standard package with visible
leads
• Qualified according AEC Q101
Application Examples
Driver amplifier
• 1.9 GHz and 5.8 GHz cordless phones
Transmitter driver amplifier
• 2.4 GHz WLAN / Bluetooth / WiMAX
• 3.5 GHz WiMax
• 5.5 GHz WLAN / WiMAX
Output stage LNA for active antennas
• GPS, SDARS
• 2.4 / 5.5 GHz WLAN
• 2.4 / 3.5 / 5.5 GHz WiMAX, etc
Suitable for 8 - 12 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP750
Data Sheet
Package
SOT343
1=B
Pin Configuration
2=E
3=C
7
4=E
Marking
R8s
Revision 1.0, 2010-10-22