BFP750 Datasheet, PDF (5/27 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP750
List of Figures
List of Figures
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Total Power Dissipation P_tot = f (T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
BFP750 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter . . . . . . . . . . . . . . . . . 15
DC Current Gain h_FE = f (I_C), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16
Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 16
Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Transition Frequency f_T = f (I_C), f = 1 GHz, V_CE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters. . . . . . . . . . . . . . . . . 18
Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C =60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 20
Maximum Power Gain G_max = f (V_CE), I_C = 60 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20
Input Matching S₁₁ = f ( f ), V_CE = 3 V, I_C = 30 / 60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Source Impedance for Minimum Noise Figure Z_opt = f ( f ), V_CE = 3 V, I_C = 30 / 60 mA . . . . . . . . 21
Output Matching S₂₂ = f ( f ), V_CE = 3 V, I_C = 30 / 60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Noise Figure NF_min = f ( f ), V_CE = 3 V, I_C = 30 / 60 mA, Z_S = Z_opt . . . . . . . . . . . . . . . . . . . . . . . . . 22
Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23
Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23
Comparison Noise Figure NF₅₀ / NF_min= f (I_C), V_CE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . 24
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Marking Description (Marking BFP750: R8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
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Revision 1.0, 2010-10-22