BFP196 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP196
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
dB ^IC^=50mA
0.9GHz
14
0.9GHz
12
1.8GHz
10
8
1.8GHz
6
4
2
0
0
2
4
6
8
V
12
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
36
dBm
32
30
8V
5V
28
3V
26
24
2V
22
20
18
16
1V
14
12
0
20 40 60 80 100 mA 130
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
32
dB
I_C=50mA
24
20
16
12
8
10V
2V
4
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
V_CE = Parameter
32
dB
I_C=50mA
24
20
16
12
8
4
10V
2V
0
1V
0.7V
-4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Jun-22-2001