BFP196 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP196
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1.8
pF
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
8.0
GHz
6.0
5.0
10V
5V
3V
2V
4.0
1V
3.0
0.7V
2.0
1.0
0.0
0
20
40
60
80 mA
120
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
18
dB
10V
5V
14
3V
2V
12
10
1V
8
0.7V
6
0
20
40
60
80 mA
120
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
10
10V
dB
5V
3V
8
2V
7
6
5
1V
4
3
0.7V
2
1
0
0
20
40
60
80 mA
120
I_C
6
Jun-22-2001