1EDI60N12AF Datasheet, PDF (7/22 Pages) Infineon Technologies AG – Separate output variant for MOSFET

1EDI EiceDRIVER™ Compact
Single Channel MOSFET Gate Driver IC
Separate output
variant for MOSFET
1
Overview
Main Features
• Single channel isolated MOSFET Driver
• Input to output isolation voltage up to 1200 V
• For high voltage power MOSFETs
• Up to 10 A typical peak current at rail-to-rail outputs
• Separate source and sink outputs
Product Highlights
• Galvanically isolated Coreless Transformer Driver
• Wide input voltage operating range
• Low input to output capacitive coupling
• Suitable for operation at high ambient temperature
Typical Application
• AC and Brushless DC Motor Drives
• High Voltage PFC, DC/DC-Converter and DC/AC-Inverter
• Induction Heating Resonant Application
• UPS-Systems
• Welding
• Solar MPPT boost converter
ED-
Compact
Description
The 1EDI60N12AF is a galvanically isolated single channel MOSFET driver in a PG-DSO-8-51 package that
provides output currents of at least 6 A at separated output pins.
The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to
support even 3.3 V microcontroller.
Data transfer across the isolation barrier is realized by the Coreless Transformer Technology.
Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and active
shutdown.
Product Name
1EDI60N12AF
Gate Drive Current (min)
±6.0 A MOSFET level optimized
Package
PG-DSO-8-51
Data Sheet
7
Rev. 2.0, 2015-06-01