1EDI60N12AF Datasheet, PDF (16/22 Pages) Infineon Technologies AG – Separate output variant for MOSFET

Table 4 Voltage Supply (cont’d)
Parameter
Symbol
Min.
Quiescent current input I_Q1
–
chip
Quiescent current output I_Q2
–
chip
5.3.2 Logic Input
1EDI EiceDRIVER™ Compact
Separate output variant for MOSFET
Electrical Parameters
Values
Typ.
0.65
Max.
1.0
1.2
2.0
Unit
mA
mA
Note /
Test Condition
V_VCC1 = 5 V
IN+ = High,
IN- = Low
=>OUT = High
V_VCC2 = 15 V
IN+ = High,
IN- = Low
=>OUT = High
Note: Unless stated otherwise VCC1 = 5.0V
Table 5 Logic Input
Parameter
IN+,IN- low input voltage
IN+,IN- high input voltage
IN+,IN- low input voltage
IN+,IN- high input voltage
IN- input current
IN+ input current
5.3.3 Gate Driver
Symbol
V_IN+L,V_IN-L
V_IN+H,V_IN-H
V_IN+L,V_IN-L
V_IN+H,V_IN-H
I_IN-
I_IN+,
Min.
–
70
–
3.5
–
–
Values
Typ.
–
–
–
–
70
70
Max.
30
–
1.5
–
200
200
Unit
%
%
V
V
μA
μA
Note /
Test Condition
of VCC1
of VCC1
–
–
V_IN- = GND1
V_IN+ = VCC1
Table 6 Gate Driver
Parameter
Symbol
High level output peak
current
1EDI60N12AF
I_OUT+,PEAK
Min.
6.0
Values
Typ.
–
Max.
–
10.0
Low level output peak I_OUT-,PEAK
current
–
–
1EDI60N12AF
6.0
9.4
1) voltage across the device V_{(VCC2 - OUT+)} or V_{(OUT- - GND2)} < V_VCC2.
Unit
A
A
Note /
Test Condition
1)
IN+ = High,
IN- = Low,
V_VCC2 = 15 V
1)
IN+ = Low,
IN- = Low,
V_VCC2 = 15 V
Data Sheet
16
Rev. 2.0, 2015-06-01