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XMC4700 Datasheet, PDF (69/130 Pages) Infineon Technologies AG – Microcontroller Series for Industrial Applications
Preliminary
XMC4700 / XMC4800
XMC4000 Family
Electrical Parameters
Table 32 RTC_XTAL Parameters
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Input frequency
Oscillator start-up
time1)2)3)
fOSC SR −
32.768 −
kHz
tOSCS
−
−
5
s
CC
Input voltage at
RTC_XTAL1
VIX SR -0.3 −
VBAT + V
0.3
Input amplitude (peak- VPPX SR 0.4
−
−
V
to-peak) at
RTC_XTAL12)4)
Input high voltage at
RTC_XTAL15)
VIHBXSR 0.6 × −
VBAT
VBAT + V
0.3
Input low voltage at
RTC_XTAL15)
VILBX SR -0.3 −
0.36 × V
VBAT
Input Hysteresis for
RTC_XTAL15)6)
VHYSX
CC
0.1 ×
VBAT
−
V 3.0 V ≤
VBAT < 3.6 V
0.03 ×
VBAT
−
V
VBAT < 3.0 V
Input leakage current at IILX1 CC -100 −
RTC_XTAL1
100 nA Oscillator power
down
0 V ≤ VIX ≤ VBAT
1) tOSCS is defined from the moment the oscillator is enabled by the user with SCU_OSCULCTRL.MODE until the
oscillations reach an amplitude at RTC_XTAL1 of 400 mV.
2) The external oscillator circuitry must be optimized by the customer and checked for negative resistance and
amplitude as recommended and specified by crystal suppliers.
3) For a reliable start of the oscillation in crystal mode it is required that VBAT ≥ 3.0 V. A running oscillation is
maintained across the full VBAT voltage range.
4) If the shaper unit is enabled and not bypassed.
5) If the shaper unit is bypassed, dedicated DC-thresholds have to be met.
6) Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce. It can not
be guaranteed that it suppresses switching due to external system noise.
Data Sheet
69
V0.7, 2015-10
Subject to Agreement on the Use of Product Information