TLE4923 Datasheet, PDF (6/18 Pages) Siemens Semiconductor Group – Dynamic Differential Hall Effect Sensor IC

TLE 4923
AC/DC Characteristics
The device characteristics listed below are guaranteed in the full operating range.
Parameter
Symbol Limit Values Unit Test Condition Test
min. typ. max.
Circuit
Supply current
I_S
3.1 4.1 5.3 mA
1
8.1 10.5 13.6 mA
1
Supply current
I_son - I_soff 5.0 6.4 8.3 mA
1
difference
Supply current ratio
Center of switching
points:
(∆B_OP + ∆B_RP) / 2
I_SON /
I_SOFF
∆B_m
2 2.4 3
– 0.5 0 0.5
1
mT ∆B = 2.0 mT, 2
f = 200 Hz,
– 40 °C < T_j ≤
150 °C ^{1) 2)}
Center of switching ∆B_m
points:
(∆B_OP + ∆B_RP) / 2
– 0.7 0 0.7 mT ∆B = 2.0 mT, 2
f = 200 Hz,
150 °C < T_j <
190 °C ^{1) 2)}
Hysteresis
∆B_hy
1
1.5 2.2 mT ∆B = 2.0 mT, 2
f = 200 Hz ³⁾
Current rise time
t_r
0.5 µs
2
Current fall time
t_f
0.5 µs
2
Delay time⁴⁾
t_dop
t_drp
t_dop - t_drp
25 µs f = 10 kHz,
2
10 µs ∆B = 5 mT
15 µs
Filter input resistance R_C
35 43 52 kΩ 25 °C ± 2 °C 1
Filter sensitivity to ∆B S_C
8.5
mV/ 25 °C ± 2 °C 1
mT
Filter bias voltage V_C
1.6 2.0 2.4 V
∆B = 0
1
Frequency
f
5)
10000 Hz ∆B = 5 mT
2
Resistivity against ∆B_m
– 0.1
0.1 mT F = 2 N
2
mechanical stress ∆B_Hy – 0.1
0.1 mT
(piezo)⁶⁾
Data Sheet
6
2000-07-01