TLE4923 Datasheet, PDF (5/18 Pages) Siemens Semiconductor Group – Dynamic Differential Hall Effect Sensor IC

TLE 4923
Absolute Maximum Ratings
Parameter
Symbol Limit Values Unit
min.
max.
Supply voltage
V_S
– 18¹⁾
24
V
Capacitor voltage
V_C
– 0.3
3
V
Junction temperature
T_j
Junction temperature
T_j
Junction temperature
T_j
Junction temperature
T_j
150
°C
160
°C
170
°C
190
°C
Storage temperature
T_S
– 40
150
°C
Thermal resistance
R_{th JA}
1) _{Reverse current drawn by the device < 10 mA}
190
K/W
2) _{Can be reduced significantly by further packaging process, e. g. overmolding.}
The device is ESD protected up to 2 kV (HL test procedure)
Remarks
5000 h
2500 h
500 h
4h
2)
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Operating Range
Parameter
Supply voltage
Junction temperature
Pre-induction
Differential induction
Symbol Limit Values
min.
max.
V_S
4.5
18
T_j
– 40
190
B₀
– 500 500
∆B
– 40
40
Unit Remarks
V
°C
mT At Hall probe;
independent of
magnet
orientation
mT
Note: Unless otherwise noted, all temperatures refer to junction temperature.
In the operating range the functions given in the circuit description are fulfilled.
Data Sheet
5
2000-07-01