SPW32N50C3_08 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPW32N50C3
5 Typ. output characteristic
I_D = f (V_DS); T_j=150°C
parameter: t_p = 10 µs, V_GS
80
Vgs = 20V
Vgs = 6V
A
Vgs = 5.5V
6 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
2
Ω
1.6 _{Vgs = 4V}
1.4
Vgs = 5.5V
Vgs = 4.5VVgs = 5V
1.2
40
Vgs = 5V
1
0.8
Vgs = 4.5V
0.6
20
0.4
Vgs = 4V
0.2
Vgs = 20
0
0
5
10
15
V
25
V_DS
0
0 10 20 30 40 50 60 _ID 80
I_D
7 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 20 A, V_GS = 10 V
0.65 ^SPW32N50C3
Ω
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
98%
0.1
typ
0.05
0
-60 -20 20
60 100 °C
180
T_j
8 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
160
A
120
Tj = 25°C
100
Tj =150°C
80
60
40
20
0
0 1 2 3 4 5 6 7 8 _V 10
V_GS
Rev. 2.5
Page 6
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A