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| SPW32N50C3_08 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
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Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPW32N50C3
VDS @ Tjmax 560 V
RDS(on)
0.11 â¦
ID
32 A
PG-TO247
Type
SPW32N50C3
Package
PG-TO247
Ordering Code
Q67040-S4613
Marking
32N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Reverse diode dv/dt 4)
Tj , Tstg
dv/dt
Value
32
20
96
1100
1
20
±20
±30
284
-55... +150
15
Unit
A
mJ
A
V
W
°C
V/ns
Rev. 2.5
Page 1
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
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