SPP80N06S2L-11 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

9 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 40 A, V_GS = 10 V
SPP80N06S2L-11
36
Ω
28
24
20
16
98%
12
typ
8
4
0
-60 -20 20 60 100 140 ^°C 200
T_j
11 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
C_{i s s}
SPP80N06S2L-11
SPB80N06S2L-11
10 Typ. gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS
2
V
465 µA
93 µA
1.2
0.8
0.4
0
-60 -20
20
60 100 °C 180
T_j
12 Forward character. of reverse diode
I_F = f (V_SD)
parameter: T_j , tp = 80 µs
10 ^{3 SPP80N06S2L-11}
A
10 ²
10 ³
C_{o s s}
C_{r s s}
10 ²
0
5
10
15
20
V
30
V_DS
10 ¹
10 ⁰
0
T_j = 25 °C typ
T_j = 175 °C typ
T_j = 25 °C (98%)
T_j = 175 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
Page 6
2003-05-09