SPP80N06S2L-11 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
SPP80N06S2L-11
SPB80N06S2L-11
Product Summary
V_DS
55 V
R_DS(on)
11 mΩ
I_D
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N06S2L-11
SPB80N06S2L-11
Package
P- TO220 -3-1
P- TO263 -3-2
Ordering Code
Q67060-S6035
Q67060-S6036
Marking
2N06L11
2N06L11
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
TC=25°C, ¹⁾
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=80 A , V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
I_S=80A, V_DS=44V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Value
80
58
320
280
16
6
±20
158
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09