SPD09P06PL_11 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SPD09P06PL G
9 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = -6.8 A, V_GS = -10 V
SPD09P06PL

^0.75
0.6
0.55
0.5
0.45
0.4
0.35
0.3
98%
0.25
typ
0.2
0.15
0.1
0.05
0
-60 -20 20 60 100 140 °C 200
T_j
11 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ³
10 Gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS, I_D = -250 µA
2.4
V
98 %
2
1.8
1.6
typ.
1.4
1.2
2%
1
0.8
0.6
0.4
0.2
0
-60 -20
20
60 100 _°C 180
T_j
12 Forward character. of reverse diode
I_F = f (V_SD)
parameter: T_j , tp = 80 µs
-10 ^{2 SPD09P06PL}
A
C_iss
pF
-10 ¹
C_oss
10 ²
C_rss
-10 ⁰
T_j = 25 °C typ
T_j = 175 °C typ
T_j = 25 °C (98%)
T_j = 175 °C (98%)
10 ¹
0
-5
-10
-15
-20
V
-30
V_DS
-10 ^-1
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3
V_SD
Rev 2.6
Page 6
2011-10-12