SPD09P06PL_11 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SPD09P06PL G
SIPMOS^=Power-Transistor
Feature
•^P^P-^-c^Ch^ha^anⁿnⁿe^el ^l
_{• E}E_nn_hh_aa_nn_cc_ee_mm_ee_nn_tt_mm_oo_dd_ee
^{• L}L^oo^gg^icic^LL^ee^vv^ee^ll prueb
^{• 1}1⁷7⁵5^°°^CC^oo^pp^ee^rr^aa^ttⁱⁿin^gg^tt^ee^mm^pp^ee^rr^aa^tt^uu^rr^ee
^{• Avalanche rated}
• d^Av^v/d^at^larⁿa^cte^hd^{e rated}
_{• P}d_bv_-/_fd_ret _era_lt_ee_ad_{d plating; RoHS compliant}
° Qualified according to AEC Q101
Product Summary
V_DS
-60 V

R_DS(on) 0.25
I_D
-9.7 A
PG-TO252-3
Type
SPD09P06PL G
Package
Lead free
PG-TO252-3 Yes
Gate
pin1
Drain
pin 2
Source
pin 3
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse

I_D=-9.7 A , V_DD=-25V, R_GS=25
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
dv/dt
I_S=-9.7A, V_DS=-48, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
V_GS
P_tot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
-9.7
-6.8
-38.8
70
4.2
6
±20
42
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.6
Page 1
2011-10-12