SPD08N05L Datasheet, PDF (6/8 Pages) Infineon Technologies AG – SIPMOS-R POWER TRANSISTOR

SPD 08N05L
Typ. output characteristics
I_D = f (V_DS)
parameter: t_p = 80 µs
SPD08N05L
20 _{Ptot = 24W}
A
l _{k ij h}
g
16
14
12
10
8
6
4
V_GS [V]
a
2.5
b
3.0
f^c
3.5
d
4.0
e
4.5
f
5.0
e
g
5.5
h
6.0
i
6.5
d_j
7.0
k
8.0
l
10.0
c
2
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V_DS
Typ. transfer characteristics I_D= f (V_GS)
parameter: t_p = 80 µs
V_DS ≥ 2 x I_D x R_DS(on)max
25
Typ. drain-source-on-resistance
R_DS(on) = f (I_D)
parameter: V_GS
SPD08N05L
0.50
Ω_b
c
d
e
f
0.40
0.35
0.30
0.25
0.20
0.15
0.10
V_GS [V] =
0.05 b c d e f
3.0 3.5 4.0 4.5 5.0
ghi j
5.5 6.0 6.5 7.0
g
ki ^hj
l
kl
8.0 10.0
0.00
0 2 4 6 8 10 12 A 16
I_D
Typ. forward transconductance
g_fs = f(I_D); T_j = 25˚C
parameter: g_fs
8
A
S
15
4
10
2
5
0
0 1 2 3 4 5 6V 8
V_GS
Data Sheet
6
0
0
2
4
6
8 10 A 14
I_D
06.99