SPD08N05L Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS-R POWER TRANSISTOR

SPD 08N05L
SIPMOS® Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
V_DS
55 V
Drain-Source on-state resistance R_DS(on) 0.1 Ω
Continuous drain current
I_D
8.4 A
• Logic Level
• dv/dt rated
• 175˚C operating temperature
Type
SPD08N05L
SPU08N05L
Package
P-TO252
P-TO251
Ordering Code Packaging
Q67040-S4134 Tape and Reel
Q67040-S4182-A2 Tube
Pin 1 Pin 2 Pin 3
G
D
S
MaximumRatings , at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 ˚C
T_C = 100 ˚C
Pulsed drain current
T_C = 25 ˚C
Avalanche energy, single pulse
I_D = 8.4 A, V_DD = 25 V, R_GS = 25 Ω
IDpulse
E_AS
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = 8.4 A, V_DS = 40 V, di/dt = 200 A/µs,
T_jmax = 175 ˚C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
8.4
5.9
34
35
2.4
6
±20
24
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Sheet
1
06.99