SKP10N60A_08 Datasheet, PDF (6/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP10N60A
SKW10N60A
100ns
t_d(off)
100ns ^td(off)
t_f
t_d(on)
t_r
10ns
0A
5A
10A 15A 20A 25A
t_f
t_d(on)
10ns ^tr
0Ω
20Ω
40Ω
60Ω
80Ω
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, R_G = 2 5 Ω,
Dynamic test circuit in Figure E)
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, I_C = 10A,
Dynamic test circuit in Figure E)
100ns
t_d(off)
t_d(on)
t_f
t_r
10ns
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 400V, V_GE = 0/+15V,
I_C = 10A, R_G = 2 5 Ω,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
-50°C 0°C
max.
typ.
m in.
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I_C = 0.3mA)
6
Rev. 2.3 Sep 08