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SKP10N60A_08 Datasheet, PDF (13/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Figure A. Definition of switching times
SKP10N60A
SKW10N60A
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure C. Definition of diodes
switching characteristics
τ1
τ2
τn
r1
r2
rn
Tj (t)
p(t)
r1
r2
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
13
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
a nd Stray capacity C σ =55pF.
Rev. 2.3 Sep 08