SGP20N60_09 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

t_d(off)
100ns ^tf
t_d(on)
t_r
10ns
10A
20A
30A
40A
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, R_G = 16 Ω,
Dynamic test circuit in Figure E)
SGP20N60
SGW20N60
t_d(off)
100ns
t_f
t_d(on)
t_r
10ns
0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, I_C = 20A,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_f
t_r
t_d(on)
10ns
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 400V, V_GE = 0/+15V,
I_C = 20A, R_G = 1 6Ω,
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
max.
3.5V
3.0V
typ.
2.5V
min.
2.0V
-50°C 0°C 50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I_C = 0.7mA)
6
Rev. 2.4 Nov 09