SGP20N60_09 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

SGP20N60
SGW20N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=16Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =900pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
36
30
225
54
0.44
0.33
0.77
Unit
max.
46 ns
36
270
65
0.53 mJ
0.43
0.96
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=16Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =900pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
36
30
250
63
0.67
0.49
1.12
Unit
max.
46 ns
36
300
76
0.81 mJ
0.64
1.45
1) _{Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.}
3
Rev. 2.4 Nov 09