PTFA092201E Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz

Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
2.334 A
4.65 A
1.02
9.33 A
1.01
11.64 A
1.00
13.98 A
16.32 A
0.99
18.66 A
0.98
21 A
0.97
0.96
-20
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
900
920
940
960
980
G
S
Z Source Ω
R
jX
2.256
–1.363
2.250
–1.094
2.282
–0.826
2.239
–0.545
2.288
–0.307
Z Load Ω
R
jX
1.722
–0.413
1.653
–0.109
1.651
0.186
1.562
0.518
1.562
0.795
PTFA092201E
PTFA092201F
Z₀ = 50 Ω
Z Load
980 MHz
980 MHz
900 MHz
900 MHz
Z Source
0.1
Data Sheet
6 of 11
Rev. 03.1, 2009-02-20