PTFA092201E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz

PTFA092201E
PTFA092201F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1850 mA, P_OUT = 220 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
17.5 18.5
η_D
42
44
IMD
—
—
Max
—
—
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 1850 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25 °C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70 °C, 220 W CW)
Ordering Information
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Min Typ
65
—
—
—
—
—
—
0.04
2.0
2.5
—
—
Max
—
1.0
10.0
—
3.0
1.0
Value
65
–0.5 to +12
200
700
4.0
–40 to +150
0.25
Unit
V
µA
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version
Package Outline Package Description
PTFA092201E V4 H-36260-2
Thermally-enhanced slotted flange,
single-ended
PTFA092201F V4 H-37260-2
Thermally-enhanced earless flange,
single-ended
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Shipping
Tray
Tray
Marking
PTFA092201E
PTFA092201F
Rev. 03.1, 2009-02-20