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IPP086N10N3G Datasheet, PDF (6/12 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=73 A; V GS=10 V; TO 220
20
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
18
16
14
12
98 %
10
typ
8
6
4
2
3.5
3
750 µA
2.5
75 µA
2
1.5
1
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
Coss
175 °C, 98%
102
25 °C
175 °C
25 °C, 98%
102
101
Crss
101
0
Rev. 2.5
20
40
60
V DS [V]
100
80
0
page 6
0.5
1
1.5
V SD [V]
2
2010-07-16
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