IPP086N10N3G Datasheet, PDF (1/12 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
OptiMOS^™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _{DS(on),max (TO 252)}
I_D
100 V
8.2 mΩ
80 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *
Type
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Package
Marking
PG-TO220-3
086N10N
PG-TO262-3
086N10N
PG-TO263-3
083N10N
PG-TO252-3
082N10N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=73 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
80
A
58
320
110
mJ
±20
V
125
W
-55 ... 175
°C
55/175/56
1)_{J-STD20 and JESD22}
2) _{See figure 3}
* Excep D-PAK ( TO-252-3 )
Rev. 2.5
page 1
2010-07-16