IPL60R650P6S Datasheet, PDF (6/14 Pages) Infineon Technologies AG – Very high commutation ruggedness

600VCoolMOS™P6PowerTransistor
IPL60R650P6S
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
196 -
1.7 -
17 -
Unit Note/TestCondition
V VGS=0V,IF=3A,Tf=25°C
ns VR=400V,IF=3A,diF/dt=100A/µs
µC VR=400V,IF=3A,diF/dt=100A/µs
A VR=400V,IF=3A,diF/dt=100A/µs
Final Data Sheet
6
Rev.2.0,2014-07-08