IPL60R650P6S Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Very high commutation ruggedness

600VCoolMOS™P6PowerTransistor
IPL60R650P6S
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,
TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
ThinPAK5x6
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
0.65
Ω
Qg,typ
12
nC
ID,pulse
16.5
A
Eoss@400V
1.8
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
IPL60R650P6S
Package
ThinPAK 5x6 SMD
Marking
60P6650
RelatedLinks
see Appendix A
Final Data Sheet
2
Rev.2.0,2014-07-08