IPI60R600CP Datasheet, PDF (6/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

9 Typ. gate charge
V _GS=f(Q _gate); I _D=3.3 A pulsed
parameter: V _DD
10
IPI60R600CP
10 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10²
8
120 V
150 °C, 98%
10¹
150 °C
25 °C
6
480 V
4
10⁰
25 °C, 98%
2
0
10^-1
0
5
10
15
20
0
0.5
1
1.5
2
Q _gate [nC]
V _SD [V]
11 Avalanche energy
E _AS=f(T _j); I _D=2.2 A; V _DD=50 V
12 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=0.25 mA
150
700
125
660
100
75
620
50
580
25
0
20
Rev. 2.0
60
100
140
T _j [°C]
540
180
-60
-20
20
60
100 140 180
T _j [°C]
page 6
2008-02-15