IPI60R600CP Datasheet, PDF (5/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=150 °C
parameter: V _GS
12
10
20 V
10 V
8V
7V
6V
5.5 V
8
5V
6
4
4.5 V
2
IPI60R600CP
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _j=150 °C
parameter: V _GS
2.8
7V
6.5 V
2.4
6V
5.5 V
2
20 V
5V
1.6
0
0
5
10
15
20
V _DS [V]
7 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=3.3 A; V _GS=10 V
1.8
1.2
25
0
3
6
9
I _D [A]
8 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
24
12
15
1.6
20
C °25
1.4
16
1.2
1
12
0.8
98 %
typ
0.6
C °150
8
4
0.4
0.2
-60
-20
20
60 100 140 180
T _j [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 2.0
page 5
2008-02-15