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IPD50N06S3L-08 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor
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IPD50N06S3L-08
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
2.5
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
Ciss 104
2.25
Coss
2
1.75
1.5
1.25
600µA
60µA
Crss
103
1
0.75
0.5
-60 -20
20
60 100 140 180
T j [°C]
102
0
5
10
15
20
25
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Typ. avalanche characteristics
I AV = f(t AV)
parameter: Tj(start)
100
102
101
175 °C 25 °C
150°C
100°C
25°C
10
100
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1
V SD [V]
Rev. 1.1
page 6
10
100
t AV [µs]
1000
2009-05-20
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