IPD50N06S3L-08 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

IPD50N06S3L-08
Parameter
Symbol
Conditions
Thermal characteristics²⁾
Thermal resistance, junction - case
SMD version, device on PCB
R _thJC
R _thJA
minimal footprint
6 cm² cooling area⁴⁾
min.
Values
typ.
Unit
max.
-
-
1.4 K/W
-
-
62
-
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D= 1 mA
55
-
-V
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=55 µA
1.2
1.7
2.2
Zero gate voltage drain current
I _DSS
V _DS=55 V, V _GS=0 V,
T _j=25 °C
-
0.01
1 µA
V _DS=55 V, V _GS=0 V,
T _j=125 °C²⁾
-
1
100
Gate-source leakage current
I _GSS
V _GS=16 V, V _DS=0 V
-
1
100 nA
Drain-source on-state resistance
R _DS(on) V _GS=5 V, I _D=29 A
V _GS=10 V, I _D=43 A
-
11.2
14 mΩ
-
6.4
7.8
Rev. 1.1
page 2
2009-05-20