HYS64V16200GDL Datasheet, PDF (6/16 Pages) Infineon Technologies AG – 144 pin SO-DIMM SDRAM Modules

HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to V_SS
V_IN, V_OUT – 1.0
4.6
Power supply voltage on V_DD
V_DD
– 1.0
4.6
Storage temperature range
T_STG
-55
+150
Power dissipation (per SDRAM component)
P_D
–
1
Data out current (short circuit)
I_OS
–
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
o_C
W
mA
DC Characteristics
T_A = 0 to 70 ^oC; V_SS = 0 V; V_DD = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 4.0 mA)
Output low voltage (I_OUT = 4.0 mA)
Input leakage current, any input
(0 V < V_IN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < V_OUT < V_DD)
Symbol
V_IH
V_IL
V_OH
V_OL
I_I(L)
I_O(L)
Limit Values
Unit
min.
max.
2.0
Vcc+0.3 V
– 0.5
0.8
V
2.4
–
V
–
0.4
V
– 20
20
mA
– 20
20
mA
Capacitance
T_A = 0 to 70 ^oC; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
16M x 64
max.
32M x 64
max.
Input capacitance (A0 to A11, BA0, BA1)
C_I1
28
Input capacitance (RAS, CAS, WE, CKE0)
C_I2
25
Input Capacitance (CLK0, CLK1)
C_I3
35
Input capacitance (CS0)
C_I4
25
Input capacitance (DQMB0-DQMB7)
C_I5
10
Input / Output capacitance (DQ0-DQ63)
C_IO
12
Input Capacitance (SCL,SA0-2)
C_sc
8
Input/Output Capacitance
C_sd
10
52
pF
46
pF
35
pF
30
pF
15
pF
18
pF
8
pF
10
pF
INFINEON Technologies
6
9.01