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BUP311D Datasheet, PDF (6/9 Pages) Infineon Technologies AG – IGBT With Antiparallel Diode Preliminary data sheet
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Infineon
BUP 311D
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
20
A
17V
IC
16
15V
13V
11V
14
9V
7V
12
10
8
6
4
2
0
0
1
2
3
V
5
VCE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
20
A
17V
IC
16
15V
13V
11V
14
9V
7V
12
10
8
6
4
2
0
0
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
25
A
22
IC
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8 10 V 14
VGE
Semiconductor Group
6
May-06-1999
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