BUP311D Datasheet, PDF (1/9 Pages) Infineon Technologies AG – IGBT With Antiparallel Diode Preliminary data sheet

Infineon
BUP 311D
IGBT With Antiparallel Diode
Preliminary data sheet
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Former Development ID: BUP 3JKD
Type
BUP 311D
V_CE I_C
1200V A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 100 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
Diode forward current
T_C = 100 °C
Pulsed diode current, t_p = 1 ms
T_C = 25 °C
Power dissipation
T_C = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
CO6N70R7E8Q-AU4E1S0T2
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
I_F
I_Fpuls
P_tot
T_j
T_stg
Values
1200
Unit
V
1200
± 20
A
20
12
40
tbd
tbd
W
125
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1
May-06-1999