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BSO201SPH Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS P-Power-Transistor
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D= -14.9 A; V GS= -4.5 V
BSO201SP H
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D= -250 µA
12
1.6
11
1.4
1.2
10
1
9
98 %
0.8
8
0.6
7
typ
0.4
6
0.2
5
-60
-20
20
60
100 140
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
Ciss
0
-60 -20
20
60 100 140 180
T j [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
150 °C
25 °C
150 °C, 98%
101
25 °C, 98%
Coss
100
Crss
103
0
Rev.1.32
5
10
15
- V DS [V]
10-1
20
0
page 6
0.5
1
1.5
V SD [V]
2
2009-12-21
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