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| BSO201SPH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS P-Power-Transistor | |||
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OptiMOS® P-Power-Transistor
Features
⢠single P-Channel in SO8
⢠Qualified according JEDEC1) for target applications
⢠150°C operating temperature
⢠Super Logic Level (2.5V rated)
⢠Pb-free plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
BSO201SP H
Product Summary
V DS
R DS(on),max
ID
V GS=4.5 V
V GS=2.5 V
-20 V
8.0 mâ¦
12.9
-14.9 A
PG-DSO-8
Type
BSO201SP H
Package
PG-DSO-8
Marking
201SP
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
10 secs steady state
Continuous drain current1)
ID
V GS=4.5 V, T A=25 °C
14.9
12.0 A
V GS=4.5 V, T A=70 °C
11.9
9.4
V GS=2.5 V, T A=25 °C
11.8
9.3
V GS=2.5 V, T A=70 °C
Pulsed drain current2)
I D,pulse T A=25 °C
Avalanche energy, single pulse
E AS
I D=-14.9 A, R GS=25 â¦
Gate source voltage
Power dissipation1)
Operating and storage temperature
ESD class
V GS
P tot
T A=25 °C
T j, T stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Rev.1.32
page 1
9.4
7.4
59.6
248
±12
2.5
1.6
-55 ... 150
1C (< 2 kV)
260
55/150/56
mJ
V
W
°C
°C
2009-12-21
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