BSO064N03S_09 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=16 A; V _GS=10 V
12
10
8
98 %
6
typ
4
2
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
parameter: I _D
2.5
BSO064N03S
2
500 µA
1.5
50 µA
1
0.5
0
-60
-20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10^{4 10000}
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
100
103
1000
Ciss
Coss
150 °C
25 °C
150 °C; 98 %
10
1
25 °C, 98%
102
100
0
Rev. 2.0
Crss
5
10
15
20
25
30
V _DS [V]
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V _SD [V]
page 6
2009-11-04