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| BSO064N03S_09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor | |||
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OptiMOSâ¢2 Power-Transistor
Features
⢠Fast switching MOSFET for SMPS
⢠Optimized technology for notebook DC/DC converters
⢠Qualified according to JEDEC1) for target applications
⢠N-channel
⢠Logic level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠Superior thermal resistance
⢠Avalanche rated
⢠Pb-free plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
BSO064N03S
Product Summary
V DS
R DS(on),max
ID
30 V
6.4 mâ¦
16 A
PG-DSO-8
Type
BSO064N03S
Package
PG-DSO-8
Marking
064N3S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C2)
T A=70 °C2)
T A=25 °C3)
Avalanche energy, single pulse
E AS
I D=16 A, R GS=25 â¦
Reverse diode dv /dt
dv /dt
I D=16 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation
V GS
P tot
T A=25 °C2)
Operating and storage temperature T j , T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
16
12
A
12
9.9
64
170
mJ
6
kV/µs
±20
V
2.5
1.56 W
-55 ⦠150
°C
55/150/56
Rev. 2.0
page 1
2009-11-04
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