BSD223P_14 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Enhancement mode

9 Drain-source on-resistance
R_DS(on) = f(T_j)
parameter: I_D = -0.39 A, V_GS = -4.5 V
1.6
Ω
98%
1.2
1
typ.
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100 °C 160
T_j
11 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0, f=1 MHz
10 ²
BSD 223P
10 Typ. gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS
1.6
V
1.2
98%
1
typ.
0.8
0.6
0.4
2%
0.2
0
-60
-20
20
60
100 °C 160
T_j
12 Forward character. of reverse diode
I_F = f (V_SD)
parameter: T_j
-10 ^{1 BSD 223P}
A
C_iss
-10 ⁰
pF
C_oss
C_rss
10 ¹
0 2 4 6 8 10 12 V 15
-V_DS
Rev.1.6
Page 6
-10 ^-1
-10 ^-2
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
-0.4 -0.8 -1.2 -1.6
-2 -2.4 V -3
V_SD
2014-07-29