BSD223P_14 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Enhancement mode

BSD 223P
OptiMOS^-P Small-Signal-Transistor
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
V_DS
-20 V
R_DS(on) 1.2 Ω
I_D
-0.39 A
PG-SOT-363
4
5
6
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
3
2
1
VPS05604
MOSFET1: 1,2,6
MOSFET2: 3,4,5 ^Drain
pin 6,3
Type
BSD 223P
Package
PG-SOT-363
Tape & Reel
Marking
H6327: 3000pcs/r X1s
Gate
pin 2,5
Source
pin 1,4
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Avalanche energy, single pulse
I_D=-0.39 A , V_DD=-10V, R_GS=25Ω
Reverse diode dv/dt
I_D
I_{D puls}
E_AS
dv/dt
I_S=-0.39A, V_DS=-16V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
ESD Class
JESD22-A114-HBM
Value
-0.39
-0.31
-1.56
1.4
-6
±12
0.25
-55... +150
55/150/56
Class 0
Unit
A
mJ
kV/µs
V
W
°C
Rev.1.6
Page 1
2014-07-29