BSC252N10NSFG Datasheet, PDF (6/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=40 A; V _GS=10 V
50
BSC252N10NSF G
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS
parameter: I _D
4
40
30
98 %
typ
20
3.5
430 µA
3
43 µA
2.5
2
1.5
1
10
0.5
0
-60
-20
20
60 100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10⁴
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
1000
10³
10²
10¹
10⁰
0
Rev. 2.08
Ciss
Coss
Crss
20
40
60
V _DS [V]
100
25 °C
150 °C
10
150 °C, 98%
1
80
0
page 6
25 °C, 98%
0.5
1
1.5
V _SD [V]
2
2009-11-04