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BSC252N10NSFG Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor
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1 Power dissipation
P tot=f(T C)
100
2 Drain current
I D=f(T C); V GS≥10 V
50
BSC252N10NSF G
80
40
60
30
40
20
20
10
0
0
0
40
80
120
160
0
40
80
120
160
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
100 ns
102
1 µs
10 µs
100 µs
100 0.5
1 ms
101
DC
100
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
10-1
10-1
Rev. 2.08
100
101
102
V DS [V]
10-2
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-11-04
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