BFR183W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

BFR183W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1.3
pF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
8
10V
7
5V
6
5
3V
4
2V
3
1V
2
0.7V
1
0
0 5 10 15 20 25 30 35 mA 45
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
17
10V
16
3V
15
14
2V
13
12
11
10
9
1V
8
7
0.7V
6
5
0 5 10 15 20 25 30 35 mA 45
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
13
dB
11
10
9
8
7
6
5
4
3
2
1
0
-1
0
10V
3V
2V
1V
0.7V
5 10 15 20 25 30 35 mA 45
I_C
6
Aug-09-2001