BFR183W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

BFR183W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.0345 fA
VAF = 14.772 V
BF =
IKF =
115.98 -
0.14562 A
NE =
1.2149 -
BR = 10.016 -
VAR = 3.4276 V
NC = 0.85331 -
RBM = 1.0112

IKR =
RB =
RE =
0.013483 A
2.5426

1.3435
CJE = 23.077 fF
VJE = 1.0792 V
TF =
22.746 ps XTF = 0.36823 -
ITF = 1.8773 mA PTF = 0
deg
VJC = 1.1967 V
MJC = 0.3
-
TR =
1.0553 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC =
0.54852 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
NF = 0.80799 -
ISE = 16.818 fA
NR = 0.99543 -
ISC = 1.3559 fA
IRB =
RC =
0.43801 mA
0.20486

MJE = 0.45354 -
VTF = 0.50905 V
CJC = 460.11 fF
XCJC = 0.053823 -
VJS = 0.75
V
EG = 1.11
eV
TNOM 300
K
Package Equivalent Circuit:
L_BI =
0.57
nH
L_BO = 0.4
nH
L_EI =
0.43
nH
L_EO = 0.5
nH
L_CI =
0
nH
L_CO = 0.41
nH
C_BE = 61
fF
C_CB = 101
fF
C_CE = 175
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001