BFR181W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

BFR181W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.5
pF
0.3
0.2
0.1
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
10V
8
8V
7
5V
6
5
3V
4
2V
3
1V
2
1
0
0 2 4 6 8 10 12 14 mA 18
f_T
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
10V
18
5V
17
3V
16
15
2V
14
13
12
1V
11
10
9
8
0 2 4 6 8 10 12 14 mA 18
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
10V
12
5V
11
3V
10
2V
9
8
7
6
1V
5
4
3
2
1
0
0 2 4 6 8 10 12 14 mA 18
I_C
6
Jun-27-2001