BFR181W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

BFR181W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 10 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 2 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
f = 1.8 GHz
f_T
6
8
- GHz
C_cb
- 0.32 0.5 pF
C_ce
- 0.22 -
C_eb
-
0.3
-
F
dB
- 1.45 -
-
1.8
-
Power gain, maximum stable ¹⁾
G_ms
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
- 18.5 -
Power gain, maximum available ²⁾
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
Transducer gain

I_C = 5 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
G_ma
|S_21e|²
-
13
-
-
15
-
-
9.5
-
1_{Gms = |S21 / S12|}
2_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Jun-27-2001