BFP640H6327 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 1.8 GHz
30
dBm
24
21
4V
18
3V
15
2V
12
9
6
3
0
0
10
20
30
40 mA
60
I_C
Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 3V
f = parameter
30
dB
0.9GHz
26
24
1.8GHz
22
20
2.4GHz
18
3GHz
16
4GHz
14
5GHz
12
6GHz
10
0
10
20
30
40 mA
60
I_C
BFP640
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = parameter
45
GHz
35
3V
30
25
2V
20
15
10
1V
5
0.5V
0
0
10
20
30
40 mA
60
I_C
Power Gain G_ma, G_ms = ƒ(f),
|S₂₁|² = f (f)
V_CE = 3V, I_C = 30mA
55
dB
45
40
35
30
Gms
25
20
|S21|²
Gma
15
10
0
1
2
3
4 GHz
6
f
2007-05-29
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