BFP640H6327 Datasheet, PDF(3/10 Page) Infineon Technologies AG

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BFP640H6327 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

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BFP640

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 3 V, f = 1 GHz

Collector-base capacitance

Ccb

VCB = 3 V, f = 1 MHz, VBE = 0 ,

emitter grounded

30 40

- GHz

- 0.09 0.2 pF

Collector emitter capacitance

VCE = 3 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.23 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

0.5

Noise figure

IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt

IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt

Power gain, maximum stable1)

IC = 30 mA, VCE = 3 V, ZS = ZSopt,

ZL = ZLopt , f = 1.8 GHz

Power gain, maximum available1)

IC = 30 mA, VCE = 3 V, ZS = ZSopt,

ZL = ZLopt, f = 6 GHz

Transducer gain

IC = 30 mA, VCE = 3 V, ZS = ZL = 50 â¦,

f = 1.8 GHz

Gms

Gma

|S21e|2

- 0.65 -

1.2

- dB

- 12.5 - dB

f = 6 GHz

- 10.5 -

Third order intercept point at output2)

VCE = 3 V, IC = 30 mA, ZS=ZL=50 â¦, f = 1.8 GHz

1dB Compression point at output

IC = 30 mA, VCE = 3 V, ZS=ZL=50 â¦, f = 1.8 GHz

IP3

P-1dB

- 26.5 - dBm

1Gma = |S21e / S12e| (k-(kÂ²-1)1/2), Gms = |S21e / S12e|

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50â¦ from 0.1 MHz to 6 GHz

2007-05-29

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